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hexfet ? power mosfet specifically designed for automotive applications, these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these automotive qualified hexfet power mosfet's are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. absolute maximum ratings description www.irf.com 1 advanced process technology dual n-channel mosfet ultra low on-resistance 175c operating temperature repetitive avalanche allowed up to tjmax automotive [q101] qualified lead-free benefits typical applications anti-lock braking systems (abs) electronic fuel injection power doors, windows & seats automotive mosfet IRF7103QPBF v dss r ds(on) max (m i d 50v 130@v gs = 10v 3.0a 200@v gs = 4.5v 1.5a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance parameter max. units i d @ t c = 25c continuous drain current, v gs @ 4.5v 3.0 i d @ t c = 70c continuous drain current, v gs @ 4.5v 2.5 a i dm pulsed drain current 25 p d @t c = 25c power dissipation 2.4 w linear derating factor 16 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 22 mj i ar avalanche current see fig.16c, 16d, 19, 20 a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt 12 v/ns t j, t stg junction and storage temperature range -55 to + 175 c d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 so-8
IRF7103QPBF 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 1.5a, v gs = 0v t rr reverse recovery time ??? 35 53 ns t j = 25c, i f = 1.5a q rr reverse recovery charge ??? 45 67 nc di/dt = 100a/s source-drain ratings and characteristics 12 3.0 repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle
surface mounted on 1 in square cu board starting t j = 25c, l = 4.9mh r g = 25 ? , i as = 3.0a. (see figure 12). i sd 2.0a, di/dt 155a/s, v dd v (br)dss , t j 175c limited by t jmax , see fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 50 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.057 ??? v/c reference to 25c, i d = 1ma ??? ??? 130 v gs = 10v, i d = 3.0a ??? ??? 200 v gs = 4.5v, i d = 1.5a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a g fs forward transconductance 3.4 ??? ??? s v ds = 15v, i d = 3.0a ??? ??? 2.0 v ds = 40v, v gs = 0v ??? ??? 25 v ds = 40v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? 10 15 i d = 2.0a q gs gate-to-source charge ??? 1.2 ??? nc v ds = 40v q gd gate-to-drain ("miller") charge ??? 2.8 ??? v gs = 10v t d(on) turn-on delay time ??? 5.1 ??? v dd = 25v t r rise time ??? 1.7 ??? i d = 1.0a t d(off) turn-off delay time ??? 15 ??? r g = 6.0 ? t f fall time ??? 2.3 ??? r d = 25 ? c iss input capacitance ??? 255 ??? v gs = 0v c oss output capacitance ??? 69 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 29 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current s d g
IRF7103QPBF www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.0a 3.0 6.0 9.0 12.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v
IRF7103QPBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 0.1 1 10 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 3 6 9 12 0 3 6 9 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.0a v = 10v ds v = 25v ds v = 40v ds 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRF7103QPBF www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - 25 50 75 100 125 150 175 0.0 0.6 1.2 1.8 2.4 3.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRF7103QPBF 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14. typical threshold voltage vs. junction temperature typical power vs. time 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -v gs, gate -to -source voltage (v) 0.09 0.10 0.11 0.12 0.13 0.14 0.15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.0a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.3 1.5 1.8 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 0 5 10 15 20 25 30 35 40 i d , drain current (a) 0.000 0.500 1.000 1.500 2.000 2.500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 1.00 10.00 100.00 1000.00 time (sec) 0 10 20 30 40 50 60 70 p o w e r ( w )
IRF7103QPBF www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 18. basic gate charge waveform fig 16a. maximum avalanche energy vs. drain current fig 16d. unclamped inductive waveforms fig 16c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 12 24 36 48 60 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.2a 2.5a 3.0a
IRF7103QPBF 8 www.irf.com fig 19. typical avalanche current vs.pulsewidth fig 20. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 0.10 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 3.0a
IRF7103QPBF www.irf.com 9 so-8 part marking

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so-8 package outline dimensions are shown in millimeters (inches)

IRF7103QPBF 10 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2007 data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site.

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